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Flash Toggle NAND 2

Description

This Cadence® Verification IP (VIP) supports the Flash Toggle NAND 2 standard. It is applicable to intellectual property (IP), system-on-chip (SoC), and system-level verification to provide verification of Flash NAND devices using toggle mode DDR 2.0. The VIP for Flash Toggle NAND 2 is compatible with the industry-standard Universal Verification Methodology (UVM), runs on all leading simulators, and leverages the industry-standard Cadence Memory Model core architecture, interface, and use model. 

Specification

The model supports toggle NAND DDR 2.0 Single-Level-Cell (SLC) and Multi-Level-Cell (MLC) devices from Hynix, Samsung, Toshiba, and SanDisk. The specification is available from the respective vendors. 

Protocol Features

The following table describes key features from the specification that are implemented in the VIP.

Feature Name
Description
Memory Size

Support of all common memory sizes: 64Gb, 128Gb, 256Gb, and 512Gb

Configures the following parameters to achieve desired memory size:

  • Page size in terms of number of bytes
  • Number of pages per block
  • Number of blocks per LUN (die/stack)
  • Number of LUNs per target
  • Number of targets per device
Bits per Cell Single-Level-Cell (SLC - 1 bit per cell) and Multi-Level-Cell (MLC - 2 bits per cell) devices support
Speed of Operation Up to 200MHz or 400Mbps per DQ pin
ODT Turn ODT on or off
Differential DQS Pins DQS pin is differential
Differential Rebar Pins Rebar pin is differential
Multiple Die Multiple Die with shared CEbar 
Four Planes with 2 Addressing Bits for Plane  Four plane bits, with commands that can be 2 planes of 4 planes - 2 LSB page address bits used for plane addressing 
Two Planes with Writes to 2 Pages on Each  Two plane read/write commands, accessing two simultaneous pages in each plane 
Multi-Plane/Interleaved Operations Multi-plane Read, Program, and Erase operations
Multi-Plane Cache Operations Multi-plane Cache Read and Program operations
Multi-LUN Operations Simultaneous Read, Program, Erase operations can be performed on multiple LUNs
LUN Get and Set Feature Commands to set the NAND device in certain modes using SET Feature and same can be read using GET Feature
Read ID Read device identification parameters
Reset Reset the NAND Flash Device
Read Status and Read LUN Status Read the status of the NAND device

 

Key Verification Capabilities

  • Transaction callback events on requests and responses to monitor activity
  • Error injection capability through user modification of transaction contents
  • Packet Tracker support for efficient transactions debug 

 

 

 

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